Navitas Delivers Latest Gen 5 GaNFast™ Manufactured in the U.S. Through GlobalFoundries Partnership to Accelerate AI Infrastructure
Article excerpt
Combining Navitas’ proprietary Gen 5 GaNFast™ technology and expertise with GlobalFoundries’ advanced U.S. 200mm manufacturing and process baseline strengthens U.S. leadership in GaN and secures the domestic supply chain for next-generation AI and critical infrastructure TORRANCE, Calif., Sept. 01, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that the first shipments of U.S.-manufactured 5th Generation GaNFast™ technology, in partnership with GlobalFoundries (GF), will begin in September, marking a major milestone in strengthening the domestic GaN ecosystem for AI infrastructure and critical national security applications. In November 2025, Navitas and GF announced a long-term strategic partnership to accelerate U.S. GaN innovation and domestic manufacturing. Navitas developed its Gen 5 GaNFast FETs and power integrated circuits (ICs) for production at GF’s US based 200mm GaN-on-Si manufacturing facility in Burlington, Vermont. The first shipment of the Gen 5 GaNFast family marks a major milestone in the Navitas-GF collaboration, bringing Navitas’ next-generation GaNFast technology into a U.S. production foundry for AI infrastructure, performance computing, industrial electrification, and critical national security...
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“The first shipment from our U.S. manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply,” said Kannan Soundarapandian, senior vice president of GF’s power business.