HPE was granted a patent for transistor-tuned photonic devices

{
  "signal_id": "5b661afa-2005-573d-b6d6-8ef33a40421e",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:12:28+00:00",
  "company": {
    "name": "HPE",
    "domain": "hpe.com"
  },
  "data": {
    "cpc": [
      {
        "code": "G02F 1/2257"
      },
      {
        "code": "G02F 1/212"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Data Center"
    ],
    "detail": "In September 2026 Hewlett Packard Enterprise patented electrically tunable optical components for photonic computing and high-speed data-center communications.",
    "summary": "HPE was granted a patent for transistor-tuned photonic devices",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Bassem Tossoun",
        "status": "resolved",
        "is_primary": true,
        "linkedin_url": "https://www.linkedin.com/in/bassem-tossoun-41935a37"
      },
      {
        "name": "Geza Kurczveil",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/geza-kurczveil-6855644"
      },
      {
        "name": "Di Liang",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/di-liang-7728255"
      },
      {
        "name": "Stanley Cheung",
        "status": "unresolved",
        "is_primary": false
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12748337",
    "cpc_primary": {
      "code": "G02F 1/2257"
    },
    "patent_title": "Photonic devices having a field-effect transistor (FET)",
    "patent_number": "US12748337",
    "uspto_assignee": "Hewlett Packard Enterprise Development LP",
    "patent_abstract": "Systems and methods are provided for optical devices having a field-effect transistor (FET) for optical tuning. Examples include a device layer formed on a substrate and comprising a first material, and a FET formed on the substrate. The MOSFET comprises a drain formed in the device layer comprising a first doped region, a source formed in the device layer comprising a second doped region, a gate comprising a second material formed on the device layer, and a conductive channel formed in the device layer based on a voltage bias applied to the gate. An optical waveguide is formed between the gate and the conductive channel.",
    "precision_class": "structural",
    "invention_explanation": "A photonic device that uses a field-effect transistor to adjust how light travels through a material by changing an electrical signal.",
    "technologies_mentioned": [
      "photonic devices",
      "field-effect transistors",
      "optical tuning",
      "photonic computing"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/5b661afa-2005-573d-b6d6-8ef33a40421e \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"hpe.com","limit":20}'