Lumentum was granted a patent for improved VCSEL performance.

{
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  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:33:02+00:00",
  "company": {
    "name": "Lumentum",
    "domain": "lumentum.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H01S 5/18311"
      },
      {
        "code": "H01S 5/042"
      },
      {
        "code": "H01S 5/18313"
      },
      {
        "code": "H01S 5/18322"
      },
      {
        "code": "H01S 5/1833"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Telecom"
    ],
    "detail": "In September 2026 Lumentum patented a semiconductor laser structure for controlling parasitic capacitance in VCSELs used in optical communications and sensing.",
    "summary": "Lumentum was granted a patent for improved VCSEL performance.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Chien-Yao Lu",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Albert Yuen",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Shibajyoti Ghosh Dastider",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Yeyu Zhu",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/yeyu-zhu"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12749870",
    "cpc_primary": {
      "code": "H01S 5/18311"
    },
    "patent_title": "Plated trench for parasitic capacitance control of vertical cavity surface emitting laser devices",
    "patent_number": "US12749870",
    "uspto_assignee": "Lumentum Operations LLC",
    "patent_abstract": "A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.",
    "precision_class": "structural",
    "invention_explanation": "A VCSEL design that uses plated trenches around the laser’s active area to reduce unwanted electrical capacitance and support cleaner, faster operation.",
    "technologies_mentioned": [
      "VCSELs",
      "semiconductor lasers",
      "optical communications",
      "parasitic capacitance control"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/ea2edd3e-32bf-5a0c-a0c9-09b64161cc60 \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"lumentum.com","limit":20}'