PsiQuantum was granted a patent for field-ionized semiconductor components.

{
  "signal_id": "b85236cb-56df-5689-9582-7251715a70b3",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:46:14+00:00",
  "company": {
    "name": "PsiQuantum",
    "domain": "psiquantum.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H10D 48/341",
        "label": "Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L)"
      },
      {
        "code": "H10D 62/106",
        "label": "Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L)"
      },
      {
        "code": "H10W 40/305"
      },
      {
        "code": "H10D 10/231",
        "label": "Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L)"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Product Development"
    ],
    "detail": "In September 2026 PsiQuantum patented diode technology for semiconductor hardware, using field ionization to connect cathode and anode contacts through a doped region.",
    "summary": "PsiQuantum was granted a patent for field-ionized semiconductor components.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Gary Gibson",
        "status": "resolved",
        "is_primary": true,
        "linkedin_url": "https://www.linkedin.com/in/gary-gibson-0b3839a"
      }
    ],
    "tech_area": "semiconductors",
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12751052",
    "cpc_primary": {
      "code": "H10D 48/341",
      "label": "Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L)"
    },
    "patent_title": "Electronic components employing field ionization",
    "patent_number": "US12751052",
    "uspto_assignee": "Psiquantum, Corp.",
    "patent_abstract": "A diode includes a first contact comprising a cathode. The diode also includes a field ionized, doped semiconductor region electrically coupled to the first contact. The diode further includes a second contact comprising an anode. The second contact is electrically coupled to the field ionized, doped semiconductor region. The first contact can be a first ohmic contact region electrically coupled to a first portion of the field ionized, doped semiconductor region and the second contact can be a second ohmic contact region electrically coupled to a second portion of the field ionized, doped semiconductor region.",
    "precision_class": "structural",
    "invention_explanation": "A diode that uses a strong electric field to create charge carriers in a doped semiconductor region between its two electrical contacts.",
    "technologies_mentioned": [
      "semiconductors",
      "diodes",
      "field ionization",
      "electronic components"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/b85236cb-56df-5689-9582-7251715a70b3 \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"psiquantum.com","limit":20}'