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SambaNovaPatent grant

SambaNova Systems was granted a patent for scannable SRAM.

What happened

In September 2026 SambaNova Systems patented memory circuitry for testing and diagnosing SRAM in advanced computing hardware.

Source

patents.google.comSep 29, 2026

US patent US12749528

Scannable SRAM

Abstract

A scannable memory cell includes an amplifier configured in a positive feedback loop, with the amplifier output coupled to the scan output SO terminal. The memory cell further has a data access switch coupled between the amplifier output and the bit line BL terminal, and a scan access switch coupled between the amplifier input and the scan input SI terminal. Control terminals of both switches are coupled to the word line WL and scan control SC line terminals, respectively. Some implementations further include a scan loop switch, controlled by the scan control SC terminal, and configured to interrupt the positive feedback loop when the memory cell is in scan mode. Other implementations include a scan out SO buffer or inverter with increased drive strength.

patents.google.com/patent/US12749528Read the full source

Extracted by Autobound

From the Signal API record
Signal
Patent grant

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Grant date
Sep 29, 2026
Inventors
Paul Jordan, Thomas Ziaja
Patent number
US12749528
Assignee
SambaNova Systems, Inc.

The full record

From the Signal API record

People

  • Paul JordanInventor
  • Thomas ZiajaInventor

Details

Primary CPC class
G11C 11/417
USPTO assignee
SambaNova Systems, Inc.
What the invention does
An SRAM cell that adds a scan path, allowing stored data and circuit behavior to be checked without disrupting normal memory access.

Topics and mentions

Tags

  • Intellectual Property
  • Research & Development
  • Engineering
  • Quality Assurance

Technologies named

  • SRAM
  • memory testing
  • semiconductor circuits

Extraction

Detected
Sep 30, 2026
signal_type
patents-company
signal_subtype
patentGrant

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  • industriesValue in the API
  • employee_count_lowValue in the API
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Signal

  • signal_nameValue in the API
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Show the full JSONThe record on this page and the API request

GET /v1/signals/5e574d73-20ef-582c-8b55-0060a1248b04 returns this record as JSON. POST /v1/companies/enrich returns every signal for sambanova.ai.

{
  "signal_id": "5e574d73-20ef-582c-8b55-0060a1248b04",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:27:59+00:00",
  "company": {
    "name": "SambaNova",
    "domain": "sambanova.ai"
  },
  "data": {
    "cpc": [
      {
        "code": "G11C 11/417"
      },
      {
        "code": "G11C 11/41"
      },
      {
        "code": "G11C 29/32"
      },
      {
        "code": "G11C 2029/3202"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Quality Assurance"
    ],
    "detail": "In September 2026 SambaNova Systems patented memory circuitry for testing and diagnosing SRAM in advanced computing hardware.",
    "summary": "SambaNova Systems was granted a patent for scannable SRAM.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Paul Jordan",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Thomas Ziaja",
        "status": "unresolved",
        "is_primary": false
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12749528",
    "cpc_primary": {
      "code": "G11C 11/417"
    },
    "patent_title": "Scannable SRAM",
    "patent_number": "US12749528",
    "uspto_assignee": "SambaNova Systems, Inc.",
    "patent_abstract": "A scannable memory cell includes an amplifier configured in a positive feedback loop, with the amplifier output coupled to the scan output SO terminal. The memory cell further has a data access switch coupled between the amplifier output and the bit line BL terminal, and a scan access switch coupled between the amplifier input and the scan input SI terminal. Control terminals of both switches are coupled to the word line WL and scan control SC line terminals, respectively. Some implementations further include a scan loop switch, controlled by the scan control SC terminal, and configured to interrupt the positive feedback loop when the memory cell is in scan mode. Other implementations include a scan out SO buffer or inverter with increased drive strength.",
    "precision_class": "structural",
    "invention_explanation": "An SRAM cell that adds a scan path, allowing stored data and circuit behavior to be checked without disrupting normal memory access.",
    "technologies_mentioned": [
      "SRAM",
      "memory testing",
      "semiconductor circuits"
    ]
  }
}

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