SanDisk was granted a patent for improved NAND flash programming.

{
  "signal_id": "0bc1af81-353b-5290-ae8f-0dfcdc92eb14",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-10-14T16:02:12+00:00",
  "company": {
    "name": "Sandisk",
    "domain": "sandisk.com"
  },
  "data": {
    "cpc": [
      {
        "code": "G11C 16/102"
      },
      {
        "code": "G11C 5/063"
      },
      {
        "code": "G11C 16/3404"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Storage",
      "Consumer Technology"
    ],
    "detail": "In October 2026 SanDisk patented a memory-programming approach for reliable, high-density storage in solid-state drives and other flash-based devices.",
    "summary": "SanDisk was granted a patent for improved NAND flash programming.",
    "event_at": "2026-10-13",
    "inventors": [
      {
        "name": "Jiacen Guo",
        "status": "resolved",
        "is_primary": true,
        "linkedin_url": "https://www.linkedin.com/in/jiacen-guo-955461a5"
      },
      {
        "name": "Xiang Yang",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/xiang-yang-philip"
      },
      {
        "name": "Jiahui Yuan",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/jiahui-yuan"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-10-13",
    "source_url": "https://patents.google.com/patent/US12763145",
    "cpc_primary": {
      "code": "G11C 16/102"
    },
    "patent_title": "Non-volatile memory with hole pre-charge and isolated signal lines",
    "patent_number": "US12763145",
    "uspto_assignee": "Sandisk Technologies, Inc.",
    "patent_abstract": "A non-volatile memory system programs memory cells from an erased threshold voltage distribution to programmed threshold voltage distributions by performing hole pre-charging of channels of unselected NAND strings in a selected block of a selected plane including applying a source voltage to a selected signal line of a plurality of signal lines that are isolated from each other. The selected signal line is positioned between the selected block and an unselected block and is connected to a selected source line of a plurality of source lines that are isolated from each other. The selected source line is connected to the selected block. The source voltage is greater in magnitude than any predetermined threshold voltage of the erased threshold voltage distribution. After the pre-charging, the system boosts channels of unselected NAND strings in the selected block and applies a program voltage to selected NAND strings in the selected block.",
    "precision_class": "structural",
    "invention_explanation": "A technique that pre-charges unused memory channels and isolates signal lines during programming so NAND cells can be written with better control.",
    "technologies_mentioned": [
      "NAND flash",
      "non-volatile memory",
      "solid-state storage",
      "memory programming"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/0bc1af81-353b-5290-ae8f-0dfcdc92eb14 \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"sandisk.com","limit":20}'