SanDisk was granted a patent for reducing read disturb in flash memory.

{
  "signal_id": "2703f211-16f8-57db-8c7e-b354aada3ca6",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:28:08+00:00",
  "company": {
    "name": "Sandisk",
    "domain": "sandisk.com"
  },
  "data": {
    "cpc": [
      {
        "code": "G11C 16/26"
      },
      {
        "code": "G11C 16/0483"
      },
      {
        "code": "G11C 16/08"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Storage",
      "Engineering"
    ],
    "detail": "In September 2026 SanDisk patented read-management technology for protecting data in mixed-mode non-volatile storage used in solid-state drives and embedded devices.",
    "summary": "SanDisk was granted a patent for reducing read disturb in flash memory.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Pradeep Dasari",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Harvijay Singh",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/harvijay-singh-9a108584"
      },
      {
        "name": "Xiang Yang",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/xiang-yang-philip"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12749540",
    "cpc_primary": {
      "code": "G11C 16/26"
    },
    "patent_title": "Read method enhancement to reduce read disturb in mixed-mode memory storage regions",
    "patent_number": "US12749540",
    "uspto_assignee": "Sandisk Technologies, Inc.",
    "patent_abstract": "Embodiments disclosed herein are directed to a non-volatile storage system comprising a non-volatile memory including non-volatile storage elements and control circuitry. The control circuitry is configured to: perform a first read operation to access device parameter information for a first memory operation associated with a first storage region type, the device parameter information associated with the first storage region type stored in a first block of a plurality of blocks; perform the first memory operation, using the device parameter information associated with the first storage region type; perform a second read operation to access device parameter information for a second memory operation associated with a second storage region type, the device parameter information associated with the second storage region type stored in a second block of the plurality of blocks; and perform the second memory operation, using the device parameter information associated with the second storage region type.",
    "precision_class": "structural",
    "invention_explanation": "A storage controller chooses read settings for different memory regions so accessing one area is less likely to disturb data stored nearby.",
    "technologies_mentioned": [
      "flash memory",
      "non-volatile storage",
      "memory controllers"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/2703f211-16f8-57db-8c7e-b354aada3ca6 \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"sandisk.com","limit":20}'