Skip to main content
WolfspeedPatent grant

Wolfspeed was granted a patent for a flip-chip transistor layout

What happened

In September 2026 Wolfspeed patented a compact power-semiconductor structure for electronics that use flip-chip assembly and parallel transistor cells.

Source

patents.google.comSep 29, 2026

US patent US12751077

Flip-chip field effect transistor layouts and structures

Abstract

A transistor device includes a substrate and a plurality of transistor unit cells arranged in parallel on the substrate. Each of the transistor unit cells includes a source contact, a drain contact, and a gate finger between the source contact and the drain contact. The gate finger extends in a first direction and has a first end and a second end. The transistor device further includes a first solder bump on the transistor device that is within a periphery of the active region of the device and is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger.

patents.google.com/patent/US12751077Read the full source

Extracted by Autobound

From the Signal API record
Signal
Patent grant

What this signalsA new patent often shows where a company is putting its R&D budget.

Grant date
Sep 29, 2026
Inventors
4
Tech area
semiconductors
Patent number
US12751077

The full record

From the Signal API record

People

  • Fabian RadulescuInventor
  • Basim NooriInventor
  • Scott SheppardInventor
  • Qianli MuInventor
  • Jeremy FisherInventor
  • Dan NamishiaInventor

Details

Primary CPC class
H10D 84/82 (Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L))
USPTO assignee
Wolfspeed, Inc.
What the invention does
A transistor design that places solder connections inside the active area and arranges many gate, source, and drain cells in parallel to improve chip packaging and performance.

Topics and mentions

Tags

  • Intellectual Property
  • Research & Development
  • Engineering
  • Manufacturing Operations

Technologies named

  • power semiconductors
  • flip-chip packaging
  • field-effect transistors
  • solder bumps

Extraction

Detected
Sep 30, 2026
signal_type
patents-company
signal_subtype
patentGrant

Use this data

Get every patent signal for Wolfspeed and the companies you sell to, in the tools you already use.

  1. Ask Claude about it

    Connect Autobound to Claude, Claude Code or Cursor with MCP. Then ask: “What changed at Wolfspeed this week?”

  2. Send it to your own tools

    The Signal API returns patent signals for any list of companies as JSON, for your CRM, warehouse or app.

  3. Try it free

    Sign up and spend your free credits on the companies you sell to.

    Start Free1,000 free credits

The API returns more than this page shows

This page shows a preview. The full patents-company record in the Signal API and MCP can also have these 8 fields. Some fields are empty for some signals.

Company

  • linkedin_urlValue in the API
  • industriesValue in the API
  • employee_count_lowValue in the API
  • employee_count_highValue in the API
  • revenueValue in the API
  • descriptionValue in the API

Signal

  • signal_nameValue in the API
  • associationValue in the API
Show the full JSONThe record on this page and the API request

GET /v1/signals/0c62039c-dc40-5068-9163-45ab17605de9 returns this record as JSON. POST /v1/companies/enrich returns every signal for wolfspeed.com.

{
  "signal_id": "0c62039c-dc40-5068-9163-45ab17605de9",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:46:42+00:00",
  "company": {
    "name": "Wolfspeed",
    "domain": "wolfspeed.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H10D 84/82",
        "label": "Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L)"
      },
      {
        "code": "H10W 20/43"
      },
      {
        "code": "H10W 72/9445"
      },
      {
        "code": "H10W 72/227"
      },
      {
        "code": "H10W 72/232"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Manufacturing Operations"
    ],
    "detail": "In September 2026 Wolfspeed patented a compact power-semiconductor structure for electronics that use flip-chip assembly and parallel transistor cells.",
    "summary": "Wolfspeed was granted a patent for a flip-chip transistor layout",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Fabian Radulescu",
        "status": "resolved",
        "is_primary": true,
        "linkedin_url": "https://www.linkedin.com/in/fabian-radulescu-681b3b4"
      },
      {
        "name": "Basim Noori",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/basim-noori-6792767"
      },
      {
        "name": "Scott Sheppard",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Qianli Mu",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/qianlimu"
      },
      {
        "name": "Jeremy Fisher",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Dan Namishia",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/dan-namishia-75582319"
      }
    ],
    "tech_area": "semiconductors",
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12751077",
    "cpc_primary": {
      "code": "H10D 84/82",
      "label": "Inorganic electric semiconductor devices (2025 CPC reorg of parts of H01L)"
    },
    "patent_title": "Flip-chip field effect transistor layouts and structures",
    "patent_number": "US12751077",
    "uspto_assignee": "Wolfspeed, Inc.",
    "patent_abstract": "A transistor device includes a substrate and a plurality of transistor unit cells arranged in parallel on the substrate. Each of the transistor unit cells includes a source contact, a drain contact, and a gate finger between the source contact and the drain contact. The gate finger extends in a first direction and has a first end and a second end. The transistor device further includes a first solder bump on the transistor device that is within a periphery of the active region of the device and is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger.",
    "precision_class": "structural",
    "invention_explanation": "A transistor design that places solder connections inside the active area and arranges many gate, source, and drain cells in parallel to improve chip packaging and performance.",
    "technologies_mentioned": [
      "power semiconductors",
      "flip-chip packaging",
      "field-effect transistors",
      "solder bumps"
    ]
  }
}

Long text fields are shortened on this page.

Looking up one signal by its id is free. Enrich costs 2 credits per signal returned; a call with no results is free.