GlobalFoundries Singapore was granted a patent for an isolated-pixel photodiode.

{
  "signal_id": "1ae4ce96-4912-51e9-90ba-179c0353ef3e",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:46:49+00:00",
  "company": {
    "name": "GlobalFoundries",
    "domain": "gf.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H10F 39/807"
      },
      {
        "code": "H10F 39/024"
      },
      {
        "code": "H10F 39/18"
      },
      {
        "code": "H10F 39/8057"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Product Development"
    ],
    "detail": "In September 2026 GlobalFoundries Singapore patented photodiode construction for image sensors used in cameras and other optical sensing devices.",
    "summary": "GlobalFoundries Singapore was granted a patent for an isolated-pixel photodiode.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Ping Zheng",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Eng Huat Toh",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/enghuattoh"
      },
      {
        "name": "Kiok Boone Elgin Quek",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Cancan Wu",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/cancan-wu-a7b3a210b"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12751102",
    "cpc_primary": {
      "code": "H10F 39/807"
    },
    "patent_title": "Photodiode with deep trench isolation structures",
    "patent_number": "US12751102",
    "uspto_assignee": "GlobalFoundries Singapore Pte. Ltd.",
    "patent_abstract": "A photodiode device includes a layer of semiconductor material, a plurality of pixels, each of the pixels including a diode structure on a first side of the layer of semiconductor material and a conductive layer on a second side of the layer of semiconductor material, deep trench isolation (DTI) structures isolating adjacent pixels from one another, a first vertical conductive layer over a first side of each DTI structure, and a second vertical conductive layer over a second side of each DTI structure. The first vertical conductive layer extends from the conductive layer to a first contact on the first side of each DTI structure, and the second vertical conductive layer extends from the conductive layer to a second contact on the second side of each DTI structure.",
    "precision_class": "structural",
    "invention_explanation": "A photodiode array that uses deep trenches and conductive layers to separate neighboring pixels, reducing interference between their light signals.",
    "technologies_mentioned": [
      "photodiodes",
      "image sensors",
      "deep trench isolation",
      "semiconductor fabrication"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/1ae4ce96-4912-51e9-90ba-179c0353ef3e \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"gf.com","limit":20}'