High Bandwidth Flash Advances At The 2026 FMS Conference
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By Thomas Coughlin, Contributor. At the 2026 FMS Conference, SK hynix and Sandisk unveiled significant advancements in memory and storage, particularly focusing on High Bandwidth Flash (HBF) for AI inference. SK hynix introduced new memory tiers like G0.5 (3D-stacked DRAM), G1.5 (HBF), and G2.5 (CXL-pooled memory) to optimize xPU performance. Sandisk showcased its BiCS8 and BiCS10 NAND technologies and highlighted HBF's potential to provide high-capacity, high-performance non-volatile storage, supplementing or replacing HBM. The first HBF specification was released, detailing capacities up to 512GB and bandwidths from 0.4TB/s to 3.0TB/s, utilizing UCIe interconnect. HBF demonstrated 2X GPU efficiency in AI inference compared to HBM, signaling a major shift in AI memory solutions. At the 2026 FMS Conference in Santa Clara California, stacking DRAM and NAND flash chips and making semi-customized products that expand the storage/memory hierarchy was a major topic. This piece will focus on the efforts to create high bandwidth flash, HBF, to support AI inference applications. SK hynix partnered with Sandisk to develop HBF, starting in early 2025 We will show SK hynix FMS material first, including their NAND and DRAM advances, as well as HBF and then show Sandisk presentation materials on their NAND products and HBF. During the SK hynix keynote, Kang Uksong, VP and Head of Next...
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He also showed Sandisk 218-layer BiCS8 eSSDs for compute and storage, shown below.
