SanDisk was granted a patent for faster NAND memory sensing.

{
  "signal_id": "8a429afe-624a-5628-a138-0278d9a3ee2f",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-10-30T00:44:54+00:00",
  "company": {
    "name": "Sandisk",
    "domain": "sandisk.com"
  },
  "data": {
    "cpc": [
      {
        "code": "G11C 29/12005"
      },
      {
        "code": "G11C 7/065"
      },
      {
        "code": "G11C 7/22"
      },
      {
        "code": "G11C 11/407"
      },
      {
        "code": "G11C 11/4091"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Consumer Technology"
    ],
    "detail": "In October 2026 SanDisk patented a NAND flash readout technique for storage devices that more efficiently identifies voltage thresholds in memory cells.",
    "summary": "SanDisk was granted a patent for faster NAND memory sensing.",
    "event_at": "2026-10-27",
    "inventors": [
      {
        "name": "Albert Bor Kai Chen",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Longju Liu",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/longju-liu-548a7118"
      },
      {
        "name": "Jiahui Yuan",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/jiahuiyuan"
      },
      {
        "name": "Anirudh Amarnath",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/anirudhamarnath"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-10-27",
    "source_url": "https://patents.google.com/patent/US12776383",
    "cpc_primary": {
      "code": "G11C 29/12005"
    },
    "patent_title": "Multi sense time valley search in NAND",
    "patent_number": "US12776383",
    "uspto_assignee": "Sandisk Technologies, Inc.",
    "patent_abstract": "Technology for multi sense time valley search in NAND memory. The memory cells are sensed multiple times for a single charging of the sense nodes. Also, the voltage to the control gates of the memory cells may be held at the same magnitude for each sensing. Optionally, the control gate voltage may be changed with the memory cells again being sensed multiple times for a single charging of the sense nodes. Each sensing will test for a different Vt in the valley scan. A valley point between two Vt distributions is determined based on the sensing. Substantial time may be saved while still providing for a precise search for the valley point.",
    "precision_class": "structural",
    "invention_explanation": "A method that reuses one sense-node charge to test several voltage levels, helping the memory find the center of each data-reading range more efficiently.",
    "technologies_mentioned": [
      "NAND flash",
      "memory sensing",
      "voltage-threshold detection"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/8a429afe-624a-5628-a138-0278d9a3ee2f \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"sandisk.com","limit":20}'