SK hynix Unveils 3D FeNAND for AI Computing - THE ELEC, Korea Electronics Industry Media

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    "domain": "skhynix.com"
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  "data": {
    "url": "https://www.thelec.net/news/articleView.html?idxno=14602",
    "title": "SK hynix Unveils 3D FeNAND for AI Computing - THE ELEC, Korea Electronics Industry Media",
    "excerpt": "SK hynix has developed next-generation memory technology that performs artificial intelligence (AI) computations directly within NAND flash memory. The company disclosed its research on analog computing-in-memory (A-CiM) using ferroelectric three-dimensional NAND (3D FeNAND) in a newsroom post on Oct. 14. The findings were published in a paper by the Institute of Electrical and Electronics Engineers (IEEE). A-CiM performs computations directly inside memory using analog signals. It executes multiply-accumulate (MAC) operations, the fundamental building blocks of AI computing, within memory. By reducing data movement, the technology improves processing speed and power efficiency. 3D FeNAND stores data and controls current using the polarization states of ferroelectric materials. Conventional 3D NAND uses a charge-trap nitride (CTN) structure that traps electrons in a nitride layer. Ferroelectric materials retain their internal polarization even after an external electric field is removed. According to SK hynix, FeNAND can produce multiple current states within a single cell, making it suitable for representing the weights required in AI computations. SK hynix researchers co-optimized three areas - cells, non-cell circuits and pages - to improve FeNAND’s computing performance. Simulations showed that 3D FeNAND-based A-CiM achieved up to 20 times higher throughput and 5,000 times...",
    "product": "3D FeNAND",
    "summary": "SK hynix has developed analog computing-in-memory (A-CiM) technology using ferroelectric three-dimensional NAND (3D FeNAND) to execute AI computing directly within memory.",
    "planning": true,
    "image_url": "https://cdn.thelec.net/news/photo/202610/14602_14880_3353.png",
    "confidence": 0.95,
    "product_data": {
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      "full_text": "ferroelectric three-dimensional NAND (3D FeNAND)",
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    "published_at": "2026-10-15T10:22:19Z",
    "effective_date": "2026-10-14",
    "article_sentence": "SK hynix has developed next-generation memory technology that performs artificial intelligence (AI) computations directly within NAND flash memory."
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