IBM was granted a patent for an improved MRAM device design.

{
  "signal_id": "090fad44-2bc3-58e7-9def-e6eeb7c132ab",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:47:57+00:00",
  "company": {
    "name": "IBM",
    "domain": "ibm.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H10N 50/10"
      },
      {
        "code": "G11C 11/161"
      },
      {
        "code": "H10B 61/22"
      },
      {
        "code": "H10N 50/01"
      },
      {
        "code": "H10N 50/80"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Consumer Technology"
    ],
    "detail": "In September 2026 IBM patented a magnetic-memory structure for semiconductor chips, with an overhanging tunnel barrier designed to support reliable data storage.",
    "summary": "IBM was granted a patent for an improved MRAM device design.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Oscar van der Straten",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Chih-Chao Yang",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/chih-chao-yang-51b756b2"
      },
      {
        "name": "Koichi Motoyama",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/koichi-motoyama-aab82616b"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12751211",
    "cpc_primary": {
      "code": "H10N 50/10"
    },
    "patent_title": "MRAM device with tunnel barrier overhang",
    "patent_number": "US12751211",
    "uspto_assignee": "International Business Machines Corporation",
    "patent_abstract": "A semiconductor device including a magnetic tunnel junction (MTJ) stack, where a tunneling barrier of the MTJ stack is wider than a reference layer of the MTJ stack. A semiconductor device is provided. The semiconductor device including a magnetic tunnel junction (MTJ) stack, where a tunneling barrier of the MTJ stack is wider than a reference layer of the MTJ stack, where the tunneling barrier comprises a center portion and two outer portions, where the center portion is on an upper horizontal portion of the reference layer, and the two outer portions are on a slanted upper surface of an encapsulation layer surrounding the reference layer. Forming a magnetic tunnel junction (MTJ) stack, where a tunneling barrier of the MTJ stack is wider than a reference layer of the MTJ stack.",
    "precision_class": "structural",
    "invention_explanation": "A magnetic memory cell whose insulating tunnel layer extends beyond the reference layer to shape how electrons move through the cell.",
    "technologies_mentioned": [
      "MRAM",
      "magnetic tunnel junctions",
      "semiconductor devices",
      "nonvolatile memory"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/090fad44-2bc3-58e7-9def-e6eeb7c132ab \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"ibm.com","limit":20}'