Lam Research was granted a patent for graphene-guided semiconductor deposition.

{
  "signal_id": "28b05bec-9b15-5000-849a-eb1d6484dd33",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:48:27+00:00",
  "company": {
    "name": "Lam Research",
    "domain": "lamresearch.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H10W 20/075"
      },
      {
        "code": "C23C 16/26"
      },
      {
        "code": "C23C 16/403"
      },
      {
        "code": "C23C 16/405"
      },
      {
        "code": "C23C 16/407"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Manufacturing Operations",
      "Engineering"
    ],
    "detail": "In September 2026 Lam Research patented a process for selectively depositing dielectric materials in semiconductor manufacturing, using graphene to protect metal areas.",
    "summary": "Lam Research was granted a patent for graphene-guided semiconductor deposition.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Ieva Narkeviciute",
        "status": "resolved",
        "is_primary": true,
        "linkedin_url": "https://www.linkedin.com/in/ieva-narkeviciute-55780b112"
      },
      {
        "name": "Bhadri N. Varadarajan",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/bhadri-varadarajan-336016a"
      },
      {
        "name": "Kashish Sharma",
        "status": "unresolved",
        "is_primary": false
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12751261",
    "cpc_primary": {
      "code": "H10W 20/075"
    },
    "patent_title": "Selective deposition using graphene as an inhibitor",
    "patent_number": "US12751261",
    "uspto_assignee": "Lam Research Corporation",
    "patent_abstract": "Graphene is selectively deposited on a metal layer relative to a dielectric layer of a semiconductor substrate. Dielectric material is selectively deposited on the dielectric layer relative to the metal layer of the semiconductor substrate. The graphene is a high-quality graphene film that serves as an inhibitor during deposition of the dielectric material. In some implementations, the dielectric material may be a metal oxide. In some implementations, the dielectric material may be a low-k dielectric material. The graphene remains throughout semiconductor integration processes. In some implementations, the graphene may be subsequently modified by to permit deposition on the surface of the graphene or the graphene may be subsequently removed.",
    "precision_class": "structural",
    "invention_explanation": "A chip-making method that coats metal with graphene so dielectric material forms mainly on the surrounding insulating areas.",
    "technologies_mentioned": [
      "semiconductor fabrication",
      "graphene films",
      "selective deposition",
      "low-k dielectrics"
    ]
  }
}

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