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MicronPatent grant

Micron was granted a patent for advanced 3D memory-device architecture.

What happened

In September 2026 Micron patented vertically stacked memory technology for high-density storage in electronic systems such as computing and consumer devices.

Source

patents.google.comSep 29, 2026

US patent US12751012

Memory devices and related electronic systems

Abstract

A microelectronic device comprises a stack structure comprising a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers, first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells, second pillars extending through the additional stack structure and vertically overlying the strings of memory cells, and additional slot structures comprising a dielectric material extending through at least a portion of the additional stack structure and sub-dividing each of the block structures into sub-block structures, the additional slot structures horizontally neighboring the first pillars. Related microelectronic devices, electronic systems...

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Extracted by Autobound

From the Signal API record
Signal
Patent grant

What this signalsA new patent often shows where a company is putting its R&D budget.

Grant date
Sep 29, 2026
Inventors
4
Patent number
US12751012
Assignee
Micron Technology, Inc.

The full record

From the Signal API record

People

  • Yoshiaki FukuzumiInventor
  • Jun FujikiInventor
  • Matthew J. KingInventor
  • Sidhartha GuptaInventor
  • Paolo TessariolInventor
  • Kunal ShrotriInventor

Details

Primary CPC class
H10B 43/27
USPTO assignee
Micron Technology, Inc.
What the invention does
A layered memory structure stacks conductive and insulating tiers, with vertical columns of memory cells divided into separate blocks to pack more storage into a small area.

Topics and mentions

Tags

  • Intellectual Property
  • Research & Development
  • Consumer Technology
  • Engineering

Technologies named

  • 3D NAND memory
  • vertical memory cells
  • microelectronic devices

Extraction

Detected
Sep 30, 2026
signal_type
patents-company
signal_subtype
patentGrant

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This page shows a preview. The full patents-company record in the Signal API and MCP can also have these 8 fields. Some fields are empty for some signals.

Company

  • linkedin_urlValue in the API
  • industriesValue in the API
  • employee_count_lowValue in the API
  • employee_count_highValue in the API
  • revenueValue in the API
  • descriptionValue in the API

Signal

  • signal_nameValue in the API
  • associationValue in the API
Show the full JSONThe record on this page and the API request

GET /v1/signals/1f9b26d2-2be8-55c9-a808-640d17cfabab returns this record as JSON. POST /v1/companies/enrich returns every signal for micron.com.

{
  "signal_id": "1f9b26d2-2be8-55c9-a808-640d17cfabab",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:46:03+00:00",
  "company": {
    "name": "Micron",
    "domain": "micron.com"
  },
  "data": {
    "cpc": [
      {
        "code": "H10B 43/27"
      },
      {
        "code": "H10B 41/27"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Consumer Technology",
      "Engineering"
    ],
    "detail": "In September 2026 Micron patented vertically stacked memory technology for high-density storage in electronic systems such as computing and consumer devices.",
    "summary": "Micron was granted a patent for advanced 3D memory-device architecture.",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Yoshiaki Fukuzumi",
        "status": "unresolved",
        "is_primary": true
      },
      {
        "name": "Jun Fujiki",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Matthew J. King",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/matt-king-13961511"
      },
      {
        "name": "Sidhartha Gupta",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Paolo Tessariol",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/paolo-tessariol-0816a080"
      },
      {
        "name": "Kunal Shrotri",
        "status": "resolved",
        "is_primary": false,
        "linkedin_url": "https://www.linkedin.com/in/kunalshrotri"
      },
      {
        "name": "Kye Hyun Baek",
        "status": "unresolved",
        "is_primary": false
      },
      {
        "name": "Kyle A. Ritter",
        "status": "unresolved",
        "is_primary": false
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12751012",
    "cpc_primary": {
      "code": "H10B 43/27"
    },
    "patent_title": "Memory devices and related electronic systems",
    "patent_number": "US12751012",
    "uspto_assignee": "Micron Technology, Inc.",
    "patent_abstract": "A microelectronic device comprises a stack structure comprising a stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers, the stack structure divided into block structures separated from one another by slot structures, strings of memory cells vertically extending through the block structures of the stack structure, the strings of memory cells individually comprising a channel material vertically extending through the stack structure, an additional stack structure vertically overlying the stack structure and comprising a vertical sequence of additional conductive structures and additional insulative structures arranged in additional tiers, first pillars extending through the additional stack structure and vertically overlying the strings of memory cells, each of the first pillars horizontally offset from a center of a corresponding string of memory cells, second pillars extending through the additional stack structure and vertically overlying the strings of memory cells, and additional slot structures comprising a dielectric material extending through at least a portion of the additional stack structure and sub-dividing each of the block structures into sub-block structures, the additional slot structures horizontally neighboring the first pillars. Related microelectronic devices, electronic systems, and...",
    "precision_class": "structural",
    "invention_explanation": "A layered memory structure stacks conductive and insulating tiers, with vertical columns of memory cells divided into separate blocks to pack more storage into a small area.",
    "technologies_mentioned": [
      "3D NAND memory",
      "vertical memory cells",
      "microelectronic devices"
    ]
  }
}

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