SK hynix was granted a patent for an improved memory-device architecture

{
  "signal_id": "2736d4bf-1b27-528f-9ea4-cfc1d56a74d5",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:28:02+00:00",
  "company": {
    "name": "SK Hynix",
    "domain": "skhynix.com"
  },
  "data": {
    "cpc": [
      {
        "code": "G11C 16/10"
      },
      {
        "code": "G11C 16/0483"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Consumer Technology",
      "Engineering"
    ],
    "detail": "In September 2026 SK hynix patented a transistor arrangement for controlling nonvolatile memory cells in solid-state storage and other electronic devices.",
    "summary": "SK hynix was granted a patent for an improved memory-device architecture",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Moon Sik Seo",
        "status": "unresolved",
        "is_primary": true
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12749534",
    "cpc_primary": {
      "code": "G11C 16/10"
    },
    "patent_title": "Memory device and method of operating the memory device",
    "patent_number": "US12749534",
    "uspto_assignee": "SK hynix Inc.",
    "patent_abstract": "Provided herein is a memory device and a method of operating the memory device. The memory device includes a string connected between a bit line and a source line, wherein the string includes one or more memory cells, a drain select transistor connected between the one or more memory cells and the bit line, and first and second source select transistors and a buffer source select transistor connected between the one or more memory cells and the source line, wherein the first and second source select transistors have different threshold voltages, and the buffer source select transistor is in an erase state.",
    "precision_class": "structural",
    "invention_explanation": "A memory circuit that uses multiple source-side switching transistors to control current through a row of memory cells during reading and writing.",
    "technologies_mentioned": [
      "nonvolatile memory",
      "memory cells",
      "transistors",
      "solid-state storage"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/2736d4bf-1b27-528f-9ea4-cfc1d56a74d5 \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"skhynix.com","limit":20}'