SK hynix was granted a patent for faster semiconductor-memory reads

{
  "signal_id": "332f9323-7f30-5309-a4ca-d7b74fa60148",
  "signal_type": "patents-company",
  "signal_subtype": "patentGrant",
  "detected_at": "2026-09-30T17:27:55+00:00",
  "company": {
    "name": "SK Hynix",
    "domain": "skhynix.com"
  },
  "data": {
    "cpc": [
      {
        "code": "G11C 11/4096"
      },
      {
        "code": "G11C 11/4085"
      },
      {
        "code": "G11C 11/4093"
      }
    ],
    "tags": [
      "Intellectual Property",
      "Research & Development",
      "Engineering",
      "Consumer Technology"
    ],
    "detail": "In September 2026 SK hynix patented read-control technology for speeding data access in memory chips used in computing and electronic devices.",
    "summary": "SK hynix was granted a patent for faster semiconductor-memory reads",
    "event_at": "2026-09-29",
    "inventors": [
      {
        "name": "Sung Ho Ahn",
        "status": "resolved",
        "is_primary": true,
        "linkedin_url": "https://www.linkedin.com/in/sunghoon-ahn-5a84a311b"
      }
    ],
    "event_kind": "grant_date",
    "grant_date": "2026-09-29",
    "source_url": "https://patents.google.com/patent/US12749526",
    "cpc_primary": {
      "code": "G11C 11/4096"
    },
    "patent_title": "Semiconductor memory device and controller for reading data with improved speed, and method of operating the semiconductor memory device and the controller",
    "patent_number": "US12749526",
    "uspto_assignee": "SK hynix Inc.",
    "patent_abstract": "A semiconductor memory device includes a memory cell array, a peripheral circuit, and a control logic. The memory cell array includes a plurality of memory cells. The peripheral circuit performs a read operation on selected memory cells, among the plurality of memory cells. The control logic controls the read operation of the peripheral circuit in response to a read command that is received from an external device and determines whether to perform a discharge operation of word lines that are connected to the plurality of memory cells based on a type of the read command.",
    "precision_class": "structural",
    "invention_explanation": "A memory controller chooses when to discharge word lines during a read, reducing unnecessary delays before selected memory cells are accessed.",
    "technologies_mentioned": [
      "semiconductor memory",
      "memory controllers",
      "read operations"
    ]
  }
}

curl https://signals.autobound.ai/v1/signals/332f9323-7f30-5309-a4ca-d7b74fa60148 \
  -H "X-API-KEY: $AUTOBOUND_API_KEY"

curl -X POST https://signals.autobound.ai/v1/companies/enrich \
  -H "X-API-KEY: $AUTOBOUND_API_KEY" \
  -H "Content-Type: application/json" \
  -d '{"domain":"skhynix.com","limit":20}'