Micron Advances Memory Innovation With the World's First Ultra-Dense Module for Next-Generation Servers
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BOISE, Idaho, Sept. 15, 2026 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq: MU), today announced a major milestone in memory innovation with the successful demonstration of the world's first 512GB DDR5 module on multiple server platforms. The achievement reinforces Micron's leadership in high-performance, high-capacity server memory and provides enterprise data center and cloud customers with a path to support large and demanding AI, analytics, in-memory database and simulation-heavy workloads with greater efficiency. Leading semiconductor enablers, AMD and Intel, are both actively validating the module, which will deliver speeds up to 9,200 MT/s. The module's high capacity is possible due to Micron's advanced vertical interconnect packaging innovations. This product vertically stacks DRAM dies interconnected by through-silicon vias (TSVs) to maximize density within individual DRAM packages while preserving the performance modern data center architectures demand. The module enables up to 12TB of DDR5 DRAM in a single 24-slot dual-socket server. "Micron continues to set the pace for memory technology, delivering a new class of ultra-dense, high-performance server memory that helps customers keep larger datasets closer to the compute engines that need them," said Raj Narasimhan, senior vice president and general manager of the Cloud Memory Business Unit at Micron. "A...
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