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TSMCIn development

ASML and TSMC want bigger masks for smaller chips

What happened

TSMC intends to deploy high-NA EUV technology in high-volume manufacturing for advanced nodes beginning in 2030.

Source

Article excerpt

SYSTEMS Industry push aims to eliminate stitching constraints and ready high-NA EUV systems for production by 2033 ASML and chipmaking giant TSMC have launched an industry-wide push toward 12-inch photomasks, saying the larger format could lower costs and overcome some limitations of high-NA EUV lithography. Dutch firm ASML, the only commercial supplier of EUV lithography systems, says it and TSMC have established a collaboration intended to lead the transition to larger-format photomasks for extreme ultraviolet (EUV) lithography. Intel Foundry and Samsung Electronics have also voiced their support. The initiative aims to establish a 12-inch mask pilot line by 2031 and have the supporting lithography systems ready for advanced node production by 2033. According to ASML, high-NA EUV will initially enter production using current 6-inch masks, but moving to 12-inch masks could increase fab productivity, lower costs, and remove stitching constraints. The push for larger masks stems from the anamorphic optical design ASML adopted for its first generation of high-NA EUV machines so chipmakers could continue using existing 6-inch masks. The "NA" in high-NA EUV stands for numerical aperture – a measure of an optical system's ability to collect and focus light. Achieving a higher NA required larger optics, which increased the angle at which light strikes the reticle, or mask...

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Extracted from this sentence

TSMC has so far not used high-NA EUV , including for its 2 nm process, but says it intends to deploy the technology in high-volume manufacturing for advanced nodes beginning in 2030.

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Event
In development

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Product
high-NA EUV
Takes effect
Jan 1, 2030

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Details

Release type
Technology

Topics and mentions

Product tags

  • future tech
  • general technology

Extraction

Confidence
90%
Detected
Sep 8, 2026
signal_type
news
signal_subtype
is_developing

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This page shows a preview. The full news record in the Signal API and MCP can also have these 8 fields. Some fields are empty for some signals.

Company

  • linkedin_urlValue in the API
  • industriesValue in the API
  • employee_count_lowValue in the API
  • employee_count_highValue in the API
  • revenueValue in the API
  • descriptionValue in the API

Signal

  • signal_nameValue in the API
  • associationValue in the API
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GET /v1/signals/f951f214-d50e-e6b2-535c-dddd82204c7e returns this record as JSON. POST /v1/companies/enrich returns every signal for tsmc.com.

{
  "signal_id": "f951f214-d50e-e6b2-535c-dddd82204c7e",
  "signal_type": "news",
  "signal_subtype": "is_developing",
  "detected_at": "2026-09-08T15:02:00+00:00",
  "company": {
    "name": "TSMC",
    "domain": "tsmc.com"
  },
  "data": {
    "url": "https://www.theregister.com/systems/2026/09/08/asml-and-tsmc-want-bigger-masks-for-smaller-chips/5294982",
    "title": "ASML and TSMC want bigger masks for smaller chips",
    "excerpt": "SYSTEMS Industry push aims to eliminate stitching constraints and ready high-NA EUV systems for production by 2033 ASML and chipmaking giant TSMC have launched an industry-wide push toward 12-inch photomasks, saying the larger format could lower costs and overcome some limitations of high-NA EUV lithography. Dutch firm ASML, the only commercial supplier of EUV lithography systems, says it and TSMC have established a collaboration intended to lead the transition to larger-format photomasks for extreme ultraviolet (EUV) lithography . Intel Foundry and Samsung Electronics have also voiced their support. The initiative aims to establish a 12-inch mask pilot line by 2031 and have the supporting lithography systems ready for advanced node production by 2033. According to ASML, high-NA EUV will initially enter production using current 6-inch masks, but moving to 12-inch masks could increase fab productivity, lower costs, and remove stitching constraints. The push for larger masks stems from the anamorphic optical design ASML adopted for its first generation of high-NA EUV machines so chipmakers could continue using existing 6-inch masks. The \"NA\" in high-NA EUV stands for numerical aperture – a measure of an optical system's ability to collect and focus light. Achieving a higher NA required larger optics, which increased the angle at which light strikes the reticle, or mask, creating...",
    "product": "high-NA EUV technology",
    "summary": "TSMC intends to deploy high-NA EUV technology in high-volume manufacturing for advanced nodes beginning in 2030.",
    "planning": true,
    "image_url": "https://image.theregister.com/5294994.jpg?imageId=5294994&x=0&y=0&cropw=100&croph=100&panox=0&panoy=0&panow=100&panoh=100&width=1200&height=683",
    "confidence": 0.9,
    "product_data": {
      "name": "high-NA EUV",
      "full_text": "high-NA EUV technology",
      "fuzzy_match": false,
      "release_type": "technology"
    },
    "product_tags": [
      "future_tech",
      "general_technology"
    ],
    "published_at": "2026-09-08T15:02:00Z",
    "effective_date": "2030-01-01",
    "article_sentence": "TSMC has so far not used high-NA EUV , including for its 2 nm process, but says it intends to deploy the technology in high-volume manufacturing for advanced nodes beginning in 2030."
  }
}

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